Abstract
Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shape patterned Si (001) substrate. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, a high-quality GaAs layer is obtained with threading dislocation density approximately ~ 106 cm-2 via electron channeling contrast image (ECCI) method. Strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) substrates.
© 2018 The Author(s)
PDF ArticleMore Like This
Ting Wang, Wen-Qi Wei, Bin Zhang, Jian-Huan Wang, Qi Feng, and Jian-Jun Zhang
W1F.3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2018
Wenqi Wei, Zihao Wang, Ting Wang, and Jianjun Zhang
T2D.5 Asia Communications and Photonics Conference (ACP) 2021
Ting Wang, Wen-Qi Wei, Jian-Huan Wang, and Jian-Jun Zhang
SW4I.6 CLEO: Science and Innovations (CLEO:S&I) 2018