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Conferences > ASSP > 2005 > 1L > 157

Intense laser emission at 981 nm in an Ytterbium-doped KY(WO4)2 crystal

Aude Bouchier, Gaëlle Lucas-Leclin, François Balembois, and Patrick Georges

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Abstract

We present the first efficient laser emission at the three-level transition at 981 nm in an ytterbium-doped KY(WO4)2 crystal in a microchip configuration. The pump laser is a Ti:sapphire laser emitting at 931 nm. With the maximum pump power, the crystal emits up to 526 mW. We have also demonstrated an intense amplified spontaneous emission at this wavelength, with a maximum power of 320 mW.

© 2005 Optical Society of America

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