Abstract
The purpose of this paper is the characterization of Hg0.3Cd0.7Te avalanche photodiodes at λ = 1.3 μm. The devices are manufactured for optical transmission systems by SAT. This cadmium-rich alloy range has been chosen because of the very large spin-orbit coupling exhibited by these materials. The values of the ratio k = β/α, which are very important for multiplication noise performance, are ~10, β being the hole ionization coefficient and α the electron ionization coefficient.1
© 1985 Optical Society of America
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