Abstract
Picosecond photoconductive detectors utilizing thin films of amorphous1 and radiation-damaged2 semiconductors have been reported. Picosecond photoconductivity has been measured for the first time in 1800-Å thick films of polycrystalline GdTe grown by organometallic chemical vapor deposition (OMCVD) with a grain size of ~200-Å. High-speed photodetectors with sampling oscilloscope-limited response times of 35 psec (FWHM) and average drift mobilities, >11 cm2/V sec, have been made.
© 1985 Optical Society of America
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