Abstract

Complimentary metal-oxide-semiconductor (CMOS) circuits fabricated on the ultra-thin silicon film on sapphire substrate are evolving into an attractive technology to be used in driver and receiver for high bandwidth optoelectronic (OE) interconnects.¹ Because of the dielectric property of the sapphire substrate, the CMOS process results in nearly negligible parasitic capacitance and thus a very fast circuitry (theoretical f_T, up to 40 GHz). VCSELs and photodetectors (PDs) can directly be flip-chip bonded onto these transparent drivers and receivers. The top emitting and receiving VCSELs and PDs will readily be operational without extra substrate removal processes. The thermally conductive sapphire substrate further provides a superior heat sink.

© 2002 Optical Society of America