Abstract

InGaAsN QW active lasers, proposed by Kondow et. al., ¹ have shown strong potential for temperature-insensitive optical transmitters at λ = 1.3 μm used in metropolitan optical network systems. Here we demonstrate low-threshold-current MOCVD-grown diode lasers, as shown in Fig. 1, utilizing 60-Å In_0.4Ga_0.1As QW and 60-Å ln_0.4Ga_0.6As_0.995N_0.005 QW active layers, with strain compensating GaAs_0.8P_0.15 (tensile) barriers and a (tensile) InGaP (Δa/a = -700 ppm) buffer layer.² We find the use of a tensile-strained InGaP buffer layer to be crucial for the growth of the high-In-content InGaAs(N) QWs on a thick high-Al-content AlGaAs bottom-cladding layers, as evident from the significant improvement in the luminescence from incorporation of the buffer layer.²

© 2002 Optical Society of America