Abstract

This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×10⁹ cm^-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.

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