Abstract
Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core–shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the InxGa1−xN alloy makes it possible to realize laser emission in the full visible spectrum.
© 2013 IEICE
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