Abstract
Electron-beam-pumped (EBP) green semiconductor lasers can be used for projection television, optical communications via plastic fibers, medicine etc. The application of such lasers is strongly restricted by both a relatively high threshold current density at room-temperature (RT) and a high energy of the electron beam needed for laser generation. Sufficient progress in the development of EBP lasers has been achieved using semiconductor heterostructures as the laser active elements. The lasing with microgun excitation has been demonstrated [1], although at low temperatures. Recently we have reported on fabrication of EBP blue-green RT lasers based on alternately-strained superlattice (SL) waveguide and CdSe/ZnSe quantum dot (QD) active region with the value of threshold current density as low as 0.8 A/cm2 at electron beam energy 16 keV [2,3].
© 2007 IEEE
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