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Helium-Ion-Induced Radiation Damage in LiNbO3 Thin Film Electro-Optic Modulators

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Abstract

We study He+-induced radiation damage in 10-μm-thick LiNbO3-thin-film modulators. Results show induced-strain, scattering from interstitials, and the degree of overlap between guided modes with damaged region result in degradation of device extinction ratio and VπL.

© 2014 Optical Society of America

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