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Conferences > CLEO_SI > 2017 > STu1N > STu1N.6

Investigation of Si-based Ge0.89Sn0.11 Photoconductors with 3.0 μm photoresponse

Thach Pham, Huong Tran, Wei Du, Joe Margetis, Yiyin Zhou, Perry C. Grant, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu

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Abstract

The Ge0.89Sn0.11 photoconductors with interdigitated electrodes have been investigated. High responsivity of 28.5 A/W and spectral response cutoff at 3.0 μm were achieved. The D* of 4.5×1010 cm∙Hz1/2W−1 is close to that of extended-InGaAs detector.

© 2017 Optical Society of America

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