Abstract

Since the first demonstration of an InP-based pin FET photoreceiver by Leheny in 1980,¹ much effort has focused on the development of receiver optoelectronic integrated circuits (OEICs) (circuits that monolithically integrate a photodetector and an amplifier circuit on a single semiconductor chip) for long-wavelength optical communication systems. Monolithic integration offers significant advantages over hybrid circuits in compactness, reliability, performance improvements, and cost reductions. However, it has been more difficult to build high-performance receiver OEICs on InP substrates than on GaAs substrates² because of the immaturity of growth and fabrication techniques for InP-based electron devices and photodetectors. Sensitivity and bandwidth, however, have been improved in recent years.

© 1992 Optical Society of America