Abstract

We describe a combined 6 x 6 k · p and one-band effective mass modelling tool to calculate absorption spectra in Ge–SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge–SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of electroabsorption modulators. We employ strain-engineering in Ge–SiGe MQW systems to design structures for modulation at 1310 nm and 1550 nm.

© 2010 IEEE

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures

Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Xavier Le Roux, Eleonora Gatti, Samson Edmond, Johann Osmond, Eric Cassan, and Laurent Vivien
Opt. Lett. 35(17) 2913-2915 (2010)

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

D. C. S. Dumas, K. Gallacher, S. Rhead, M. Myronov, D. R. Leadley, and D. J. Paul
Opt. Express 22(16) 19284-19292 (2014)

Design and analysis of electro-absorption modulators with uniaxially stressed Ge/SiGe multiple quantum wells

Jianfeng Gao, Junqiang Sun, Jialin Jiang, Heng Zhou, and Yang Zhou
Opt. Express 25(10) 10874-10884 (2017)

Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides

Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, Eric Cassan, and Laurent Vivien
Opt. Lett. 36(10) 1794-1796 (2011)

Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall
Opt. Lett. 36(21) 4158-4160 (2011)