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Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon

Jianan Duan, Bozhang Dong, Weng W. Chow, Heming Huang, Shihao Ding, Songtao Liu, Justin C. Norman, John E. Bowers, and Frédéric Grillot

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Abstract

This work compares the four-wave mixing (FWM) effect in epitaxial quantum dot (QD) lasers grown on silicon with quantum well (QW) lasers. A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions. The gain in signal power is higher for p-doped QD lasers than for undoped lasers, despite the same FWM coefficient. Owing to the near-zero linewidth enhancement factor, QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers. Thus, this leads to self-mode locking in QD lasers. These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.

© 2022 Chinese Laser Press

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Data Availability

All data generated or analyzed during this study are available within the paper and its supplementary materials. Further source data will be made available upon reasonable request.

Code Availability.

The analysis codes will be made available upon reasonable request.

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Figures (5)
Fig. 1.
Fig. 1. Epitaxial structure of the QD laser on silicon.

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Fig. 2.
Fig. 2. Optical injection locking setup used for the four-wave mixing experiments.

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Fig. 3.
Fig. 3. Optical spectra from a four-wave mixing experiment for (a) undoped QD laser with upconversion frequency detuning of − 114   GHz (probe–drive mode number difference Δ m = 3 ); (b) p-doped QD laser with upconversion frequency detuning of − 89   GHz (probe–drive mode number difference Δ m = 3 ) and QW laser with upconversion frequency detuning of − 110   GHz (probe–drive mode number difference Δ m = 1 ). The different colored lines indicate signal power increases with increasing probe power.

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Fig. 4.
Fig. 4. Conversion efficiency of four-wave mixing for p-doped QD, undoped QD, and QW lasers as a function of probe–drive frequency detuning.

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Fig. 5.
Fig. 5. Signal–drive ratio η sd as a function of probe–drive ratio η pd for p-doped QD, undoped QD, and QW lasers. The lasers are biased at twice threshold current. The data points are from the experiment with probe–drive injection frequency detuning Δ and probe–drive mode number difference Δ m as indicated. The dashed curves are calculated from multimode laser theory indicating the corresponding FWM coefficient.

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Equations (2)

Equations on this page are rendered with MathJax. Learn more.

η CE = P Signal P Probe ,
ξ = c 2 ν d n B ( P 2 ℏ γ ) 2 Γ ( k d , k p , k s ) | Λ ( 3 ) ( ν d , ν p , ν s ) | Re [ Λ ( 1 ) ( ν d ) ] ,
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