Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

© 2012 Optical Society of America

PDF Article
More Like This
Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

Y. Q. Wang, R. Z. Wang, B. B. Wang, B. Wang, and H. Yan
NSa4A.2 Nanophotonics, Nanoelectronics and Nanosensor (N3) 2013

Large Area GaN/AlN Nanowire Resonant Tunneling Devices on Silicon

S. Fathololoumi, S. Zhao, H. P. T. Nguyen, M. Djavid, I. Shih, and Z. Mi
CTh3D.7 CLEO: Science and Innovations (CLEO_SI) 2012

Raman Enhancement from Arrays of Etched Silicon Nanowires

J. Walia, M. Khorasaninejad, and S. S. Saini
IW2C.7 Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) 2012


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription