Gain and phase dynamics in an InAs/GaAs quantum dot amplifier at 1300 nm

C. Koos; T. Vallaitis; B.-A. Bolles; R. Bonk; W. Freude; M. Laemmlin; C. Meuer; D. Bimberg; A. Ellis; J. Leuthold

CLEO/Europe and IQEC 2007 Conference Digest
(Optica Publishing Group, 2007),
paper CI3_1

Gain and phase dynamics in an InAs/GaAs quantum dot amplifier at 1300 nm

C. Koos, T. Vallaitis, B.-A. Bolles, R. Bonk, W. Freude, M. Laemmlin, C. Meuer, D. Bimberg, A. Ellis, and J. Leuthold

The European Conference on Lasers and Electro-Optics 2007

Munich Germany
17 June 2007
ISBN: 1-4244-931-4

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Advanced communication devices (CI3)

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C. Koos, T. Vallaitis, B. -. Bolles, R. Bonk, W. Freude, M. Laemmlin, C. Meuer, D. Bimberg, A. Ellis, and J. Leuthold, "Gain and phase dynamics in an InAs/GaAs quantum dot amplifier at 1300 nm," in CLEO/Europe and IQEC 2007 Conference Digest, (Optica Publishing Group, 2007), paper CI3_1.

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Abstract

Featuring sub-10 ps carrier recovery times, self assembled quantum dot (QD) semiconductor optical amplifiers (SOA) are promising devices for all-optical signal processing. In particular, InAs/GaAs QD SOAs exhibit low sensitivity with respect to temperature and show potential for uncooled operation at 1300 nm.

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