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67 GHz uni-traveling carrier photodetector on an InP-membrane-on-silicon platform

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An InP membrane-based uni-traveiling carrier photodetector, heterogeneously integrated on silicon, is realized using double-sided processing. A responsivity of 0.7 A/W at 1.55 μm and a 3 dB bandwidth beyond 67 GHz are demonstrated.

© 2016 Optical Society of America

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