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Dual-wavelength operation of GaSb-based diode lasers with asymmetric coupled quantum wells

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The DBR diode lasers with asymmetric tunnel coupled quantum wells having built-in resonant second order nonlinearity were designed and fabricated. The devices can generate comparable power in two bands near 2 um separated by ~13 meV as required for intracavity difference frequency generation.

© 2019 The Author(s)

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