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III-V Lasers Emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited)

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We report the growth of quantum-well and quantum-dot lasers on compliant InP/Si substrates by MOCVD. Laser characteristics at 1.3 to 1.5 µm from whispering-gallery-mode (WGM) micro-lasers, nano-ridge lasers and conventional Fabry-Perot lasers will be described.

© 2019 The Author(s)

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