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>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

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A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility.

© 2021 The Author(s)

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