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Conferences > FiO > 2021 > FTh4D > FTh4D.2

>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

David Moor, Joel Winiger, Ping Ma, Andreas Messner, Bertold Ian Bitachon, Stefan Abel, Felix Eltes, Jean Fompeyrine, and Juerg Leuthold

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Abstract

A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility.

© 2021 The Author(s)

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