Transferred III-V Materials - Novel Devices and Integration

B. Corbett; R. Loi; D. Quinn; J. O’Callaghan; N. Liu

doi:10.1364/IPRSN.2017.ITu2A.4

Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS)
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper ITu2A.4
•https://doi.org/10.1364/IPRSN.2017.ITu2A.4

Transferred III-V Materials - Novel Devices and Integration

B. Corbett, R. Loi, D. Quinn, J. O’Callaghan, and N. Liu

Integrated Photonics Research, Silicon and Nanophotonics 2017

New Orleans, Louisiana United States
24–27 July 2017
ISBN: 978-1-943580-30-9

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Integrated Optical Source Technologies (ITu2A)

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B. Corbett, R. Loi, D. Quinn, J. O’Callaghan, and N. Liu, "Transferred III-V Materials - Novel Devices and Integration," in Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS), OSA Technical Digest (online) (Optica Publishing Group, 2017), paper ITu2A.4.

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Abstract

Separating the substrate allows thin layers of III-V photonic semiconductor materials and devices to be integrated on foreign templates using transfer-printing. We demonstrate advanced light emitting and detecting devices based on this principle.

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Integrated Photonics Research, Silicon and Nanophotonics 2017

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