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Inverse Scattering Method Design of Regrowth-free Single-mode Semiconductor Lasers for Monolithic Integration

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An inverse scattering method is used to design single moded lasers, using etched depth insensitive pits as perturbations in the laser cavity. We compare 10 pit, 15 pit and 20 pit devices, and report strongly single moded lasers (>40dB).

© 2018 The Author(s)

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