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Gallium Phosphide Microresonator Frequency Combs

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Abstract

We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (> 10−18 m2/W) yields a 10-mW parametric threshold and 100-nm-wide combs with THz spacing, centered at 1550 nm.

© 2018 The Author(s)

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