Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Increasing wavefunction overlap of carriers in an asymmetrically graded quantum well with polarization-effect-band-engineering.

Not Accessible

Your library or personal account may give you access


A novel design based on an asymmetrically graded-well, Ala→bGa1−a→1−bN/AlcGa1−cN, where b > c > a, to enhance the optical matrix element of radiative transitions in an AlGaN based UV-LED, is theoretically studied.

© 2013 Optical Society of America

PDF Article
More Like This
Advantages of AlGaN-based deep ultraviolet light-emitting diodes with graded quantum structures in the active region

Huabin Yu, Zhongjie Ren, Zhongling Liu, Chong Xing, and Haiding Sun
AF1I.1 CLEO: Applications and Technology (CLEO_AT) 2020

Dip-shaped AlGaN/AlN Quantum Well Structures with high TE-polarized Optical Gain

Seoung-Hwan Park and Joing-In Shim
TuPH_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2013

High Internal Quantum Efficiency from AlGaN-delta-GaN Quantum Well at 260 nm

Cheng Liu, Kevin Lee, Galen Harden, Anthony Hoffman, Huili (Grace) Xing, Debdeep Jena, and Jing Zhang
AF1I.2 CLEO: Applications and Technology (CLEO_AT) 2020


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2023 | Optica Publishing Group. All Rights Reserved