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Increasing wavefunction overlap of carriers in an asymmetrically graded quantum well with polarization-effect-band-engineering.

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Abstract

A novel design based on an asymmetrically graded-well, Ala→bGa1−a→1−bN/AlcGa1−cN, where b > c > a, to enhance the optical matrix element of radiative transitions in an AlGaN based UV-LED, is theoretically studied.

© 2013 Optical Society of America

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