Actively tunable terahertz metasurface absorber due to surface phonon polaritons

Feng Wei Gao; Chao Sui; Sheng Zhou; Sheng Zhou; Shu Fang Fu; Shu Fang Fu; Xuan Wang; Yu Ling Song; Qiang Zhang; Hong Liang; Xuan Zhang Wang

doi:10.1364/JOSAB.443778

Journal of the Optical Society of America B
Vol. 39,
Issue 4,
pp. 1195-1202
(2022)
•https://doi.org/10.1364/JOSAB.443778

Actively tunable terahertz metasurface absorber due to surface phonon polaritons

Feng Wei Gao, Chao Sui, Sheng Zhou, Shu Fang Fu, Xuan Wang, Yu Ling Song, Qiang Zhang, Hong Liang, and Xuan Zhang Wang

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Feng Wei Gao, Chao Sui, Sheng Zhou, Shu Fang Fu, Xuan Wang, Yu Ling Song, Qiang Zhang, Hong Liang, and Xuan Zhang Wang, "Actively tunable terahertz metasurface absorber due to surface phonon polaritons," J. Opt. Soc. Am. B 39, 1195-1202 (2022)

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Abstract

A tunable terahertz (THz) metasurface (MS) absorber based on the surface phonon polariton (SPhP) is proposed based on a layered structure that consists of a split-silver-ring array followed by a graphene layer, polar crystal layer, and silver layer. A dynamically tunable, polarization-independent, and angle-insensitive MS absorber is numerically investigated at THz frequencies. By changing the Fermi energy of graphene from 0 to 1.0 eV, the state of the absorber can switch between the OFF state (with an absorptivity above 90%) and ON state (with an absorptance below 3%). The switching intensity (SI) of the absorber remains greater than 80% for TE incidence wave with incident angles from 0° to 70° and for TM incidence wave incident angles from 0° to 40° in the frequency range from 2.74 to 3.51 THz. These results should be helpful in guiding the design of THz tunable devices such as optical switches, smart absorbers, and imaging.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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$E_{F}$ (eV)	$V_{D C}$ (V)	$E_{F}$ (eV)	$V_{D C}$ (V)
0	0	0.6	113.8
0.1	18.9	0.7	132.8
0.2	37.9	0.8	151.8
0.3	56.9	0.9	170.8
0.4	75.9	1.0	189.8
0.5	94.9

Reference	Constitutive Materials	Unit Cell Dimensions ( $µ m^{3}$ )	Maximum Absorptivity ( $> 90 %$ )	Minimum Absorptivity ( $< 5 %$ ) ( $E_{F} = 0 e V$ )	SI (Bandwidth)	FBW ( $Δ A > 80 %$ )	Polarization-independent	Angle-insensitive
[35]	Graphene/ion-	$73 * 73 * 30$	1.10–1.86 THz	0.5–3.0 THz	$A > 80 %$	58%	$✓$	TE 0–50°
	gel/gold		$E_{F} = 0.7 e V$	$A < 2 %$	1.05–1.9 THz			TM 0–60°
[36]	$g r a p h e n e / {V O}_{2}$	$44 * 44 * 27$	1–2.8 THz	1–3 THz	$A > 80 %$	95%	$✓$	TM 0–40°
			( $E_{F} = 1.0 e V$ )	$A < 10 %$	1–2.8 THz			TE 0–40°
[37]	Graphene/silver	$40 * 40 * 21.5$	1.3–3.5 THz	1–3.4 THz	$A > 80 %$	89%	$✓$	TM 0–40°
	polysilicon/		( $E_{F} = 0.7 e V$ )	$A < 5 %$	1.3–3.4 THz			TE 0–60°
	topas/
This work	Graphene/Ag/	$9 * 9 * 2.5$	2.89–3.43 THz	1.60–4.06 THz	$A > 80 %$	24.6%	$✓$	TM 0–40°
	polar-dielectrics		( $E_{F} = 1.0 e V$ )	$A < 3 %$	2.74–3.51 THz			TE 0–75°
	crystal/Ag

$E_{F}$ (eV)	$V_{D C}$ (V)	$E_{F}$ (eV)	$V_{D C}$ (V)
0	0	0.6	113.8
0.1	18.9	0.7	132.8
0.2	37.9	0.8	151.8
0.3	56.9	0.9	170.8
0.4	75.9	1.0	189.8
0.5	94.9

Reference	Constitutive Materials	Unit Cell Dimensions ( $µ m^{3}$ )	Maximum Absorptivity ( $> 90 %$ )	Minimum Absorptivity ( $< 5 %$ ) ( $E_{F} = 0 e V$ )	SI (Bandwidth)	FBW ( $Δ A > 80 %$ )	Polarization-independent	Angle-insensitive
[35]	Graphene/ion-	$73 * 73 * 30$	1.10–1.86 THz	0.5–3.0 THz	$A > 80 %$	58%	$✓$	TE 0–50°
	gel/gold		$E_{F} = 0.7 e V$	$A < 2 %$	1.05–1.9 THz			TM 0–60°
[36]	$g r a p h e n e / {V O}_{2}$	$44 * 44 * 27$	1–2.8 THz	1–3 THz	$A > 80 %$	95%	$✓$	TM 0–40°
			( $E_{F} = 1.0 e V$ )	$A < 10 %$	1–2.8 THz			TE 0–40°
[37]	Graphene/silver	$40 * 40 * 21.5$	1.3–3.5 THz	1–3.4 THz	$A > 80 %$	89%	$✓$	TM 0–40°
	polysilicon/		( $E_{F} = 0.7 e V$ )	$A < 5 %$	1.3–3.4 THz			TE 0–60°
	topas/
This work	Graphene/Ag/	$9 * 9 * 2.5$	2.89–3.43 THz	1.60–4.06 THz	$A > 80 %$	24.6%	$✓$	TM 0–40°
	polar-dielectrics		( $E_{F} = 1.0 e V$ )	$A < 3 %$	2.74–3.51 THz			TE 0–75°
	crystal/Ag

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Journal of the Optical Society of America B