Improving the precision of semiconductor overlay measurements using dark-field digital holographic microscopy

M. Adhikary; M. Adhikary; T. Cromwijk; T. Cromwijk; C. Messinis; C. Messinis; J. de Wit; S. Konijnenberg; S. Witte; S. Witte; J. de Boer; A. J. den Boef; A. J. den Boef; A. J. den Boef

doi:10.1364/3D.2022.JTh2A.8

Imaging and Applied Optics Congress 2022 (3D, AOA, COSI, ISA, pcAOP)
Technical Digest Series (Optica Publishing Group, 2022),
paper JTh2A.8
•https://doi.org/10.1364/3D.2022.JTh2A.8

Improving the precision of semiconductor overlay measurements using dark-field digital holographic microscopy

M. Adhikary, T. Cromwijk, C. Messinis, J. de Wit, S. Konijnenberg, S. Witte, J. de Boer, and A. J. den Boef

3D Image Acquisition and Display: Technology, Perception and Applications 2022

Vancouver, British Columbia Canada
11–15 July 2022
ISBN: 978-1-957171-09-8

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Joint Poster Session III (On-Site) (JTh2A)

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M. Adhikary, T. Cromwijk, C. Messinis, J. de Wit, S. Konijnenberg, S. Witte, J. de Boer, and A. J. den Boef, "Improving the precision of semiconductor overlay measurements using dark-field digital holographic microscopy," in Imaging and Applied Optics Congress 2022 (3D, AOA, COSI, ISA, pcAOP), Technical Digest Series (Optica Publishing Group, 2022), paper JTh2A.8.

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Abstract

We present dark-field digital holographic microscopy for diffraction-based overlay metrology in semiconductor layers with feature size of a few nanometers. We aim for higher accuracy and precision by calibrating the illumination profile on the targets.

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