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Low-Power Electro-Optical Switch Based on a III-V Microdisk Cavity on a Silicon-on-Insulator Circuit

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Abstract

We introduce a compact, low-power electro-optical switch on a silicon-on-insulator circuit through heterogeneous integration. A 10μm diameter III-V microdisk cavity is employed as the switching element. Switching of a 10Gbps optical signal is demonstrated by sweeping the bias between −1.1V and +0.9V with 15dB extinction ratio and 1.2ns switching speed.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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