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Point defects in relaxed and strained Si studied by molecular dynamics method

Zhihui Chen, Zhongyuan Yu, Pengfei Lu, and Yumin Liu

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Abstract

Molecular dynamics simulations using the Tersoff potential have been performed to investigate the perturbation effects caused by the point defects in relaxed and strained Si matrices. As different kinds of point defects are introduced, Lattice distortion, mean square displacement, and vibrational spectra change obviously.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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