Growth of n-doped GaAs nanowires by Au-assisted Metalorganic Chemical Vapor Deposition: Effect of Flux Rates of n-type Dopants

Jingwei Guo; Hui Huang; Minjia Liu; Xiaomin Ren; Shiwei Cai; Wei Wang; Qi Wang; Yongqing Huang; Xia Zhang

doi:10.1364/ACP.2010.79870M

Optoelectronic Materials and Devices V
Proceedings of SPIE-OSA (Optica Publishing Group, 2010),
paper 79870M
•https://doi.org/10.1364/ACP.2010.79870M

Growth of n-doped GaAs nanowires by Au-assisted Metalorganic Chemical Vapor Deposition: Effect of Flux Rates of n-type Dopants

Jingwei Guo, Hui Huang, Minjia Liu, Xiaomin Ren, Shiwei Cai, Wei Wang, Qi Wang, Yongqing Huang, and Xia Zhang

Asia Communications and Photonics Conference and Exhibition 2010

Shanghai China
8–12 December 2010
ISBN: 9780819485557

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J. Guo, H. Huang, M. Liu, X. Ren, S. Cai, W. Wang, Q. Wang, Y. Huang, and X. Zhang, "Growth of n-doped GaAs nanowires by Au-assisted Metalorganic Chemical Vapor Deposition: Effect of Flux Rates of n-type Dopants," in Optoelectronic Materials and Devices V, F. Koyama, S. Chuang, G. Duan, and Y. Huang, eds., Vol. 7987 of Proceedings of SPIE-OSA (Optica Publishing Group, 2010), paper 79870M.

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Abstract

N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs - Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.

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