Abstract

Defect centers play a major role in the radiation-induced transmission loss for silica optical fibers. We have investigated characteristics of the best known defect centers E' in silica optical fiber material irradiated with γ ray at room temperature, and measured by using electron spin resonance (ESR) and spectrophotometer. The results show that the defect concentrations increase linearly with radiation doses from 1kGy to 50kGy. We have established the mechanism models of radiation induced defect centers’ formation. We have also studied the influences of thermal annealing on defect centers. The radiation induced defect centers can be efficiently decreased by thermal annealing. Particularly, the defect concentration is less than the initial one when the temperature of thermal annealing is over 500°C for our silica samples. These phenomena can also be explained by the optical absorption spectra we have obtained.

© 2011 Optical Society of America