Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

The effect of growth temperature on InAs quantum dots grown by MOCVD

Not Accessible

Your library or personal account may give you access

Abstract

The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×1010cm−2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.

© 2011 Optical Society of America

PDF Article
More Like This
Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Pengyu Wang, Qi Wang, Xin Guo, Zhigang Jia, Tianhe Li, Xiaomin Ren, and Shiwei Cai
83082C Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Strain induced wavelength shift in self-assembled InAs/GaAs quantum dots grown by MOCVD

Song Liang, Hongliang Zhu, and Wei Wang
239 Photorefractive Effects, Materials, and Devices (PEMD) 2005

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved