The effect of growth temperature on InAs quantum dots grown by MOCVD

Tianhe Li; Xin Guo; Qi Wang; Pengyu Wang; Zhigang Jia; Xiaomin Ren; Yongqing Huang; Shiwei Cai

doi:10.1364/ACP.2011.83082B

Optoelectronic Materials and Devices
Proceedings of SPIE (Optica Publishing Group, 2011),
paper 83082B
•https://doi.org/10.1364/ACP.2011.83082B

The effect of growth temperature on InAs quantum dots grown by MOCVD

Tianhe Li, Xin Guo, Qi Wang, Pengyu Wang, Zhigang Jia, Xiaomin Ren, Yongqing Huang, and Shiwei Cai

Asia Communications and Photonics Conference and Exhibition 2011

Shanghai China
13–16 November 2011
ISBN: 978-0-8194-8956-2

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T. Li, X. Guo, Q. Wang, P. Wang, Z. Jia, X. Ren, Y. Huang, and S. Cai, "The effect of growth temperature on InAs quantum dots grown by MOCVD," in Optoelectronic Materials and Devices, G. Duan, ed., Vol. 8308 of Proceedings of SPIE (Optica Publishing Group, 2011), paper 83082B.

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Abstract

The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×10¹⁰cm⁻² was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.

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