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The effect of growth temperature on InAs quantum dots grown by MOCVD

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The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×1010cm−2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.

© 2011 Optical Society of America

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