Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Luminescent mechanisms of Si-rich SiOx analyzed by full-band time-resolved photoluminescence

Not Accessible

Your library or personal account may give you access

Abstract

Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

© 2012 Optical Society of America

PDF Article
More Like This
Plasma Power Detuned Synthesis of Si-QD doped Si-rich SiOx Thin Film for Multicolor Electroluminescent Diodes

Chih-Hsien Cheng, Yu-Chung Lien, and Gong-Ru Lin
ATh2F.5 Asia Communications and Photonics Conference (ACP) 2012

Synthesis of Si Nano-Pyramids at SiOx/Si Interface for Enhancing Electroluminescence of Si-Rich SiOx Based MOS Diode

Chun-Jung Lin, Chi-Kuan Lin, and Gong-Ru Lin
JTuD43 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Resonant in-situ photoluminescence of Si-QDs buried in SiOx/SiNx distributed Bragg reflector

Chung-Lun Wu, Yung-Hsiang Lin, and Gong-Ru Lin
JTuI15 CLEO: Applications and Technology (CLEO:A&T) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved