III-Nitride Based Thermoelectric – Current Status and Future Potential

Jing Zhang; Hua Tong; Guangyu Liu; Nelson Tansu

doi:10.1364/ACPC.2012.AF3F.4

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper AF3F.4
•https://doi.org/10.1364/ACPC.2012.AF3F.4

III-Nitride Based Thermoelectric – Current Status and Future Potential

Jing Zhang, Hua Tong, Guangyu Liu, and Nelson Tansu

Asia Communications and Photonics Conference 2012

Guangzhou China
7–10 November 2012
ISBN: 978-1-55752-957-2

From the session
Solar Cells and Thermoelectric Technologies (AF3F)

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J. Zhang, H. Tong, G. Liu, and N. Tansu, "III-Nitride Based Thermoelectric – Current Status and Future Potential," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper AF3F.4.

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Abstract

The current status and future potential of III-Nitride semiconductors are reviewed for thermoelectric applications. Promising thermoelectric properties have been shown by the III-Nitride semiconductors both in theoretical and experimental aspects, which are of great importance for high power optoelectronic devices.

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