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Conferences > ACPC > 2012 > AF4A > AF4A.18

Growth of Axial GaAs Nanowire PN and PIN Junctions

Junshuai Li, Xin Yan, Xia Zhang, Xiaolong Lv, Jiangong Cui, and Xiaomin Ren

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Abstract

Axial GaAs nanowire pn and pin junctions were grown on GaAs(111)B substrate via metal-organic chemical vapor deposition (MOCVD) with Si as n-type dopant and Zn as p-type dopant. Scanning electron microscope (SEM) and high resolution transmission electron microscope (HRTEM) were applied to inspect nanowire properties such as diameter, height, crystallography property. Dopants incorporation were confirmed by energy dispersive spectrometer (EDS) scanning.

© 2012 Optical Society of America

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