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Design of Traveling Wave Electrode for High-speed Silicon Modulators

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Abstract

We design a traveling wave electrode to drive carrier-depletion-based silicon modulators. By optimizing the electrode on top of the active region and the connection transmission line, the impedance can be matched to 50 Ohm. The 3-dB bandwidth of the modulator can be up to 40 GHz, mainly limited by the velocity mismatch.

© 2012 Optical Society of America

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