Production Technology of High Performance III-Nitride Devices

S. D. Roh

doi:10.1364/ACPC.2012.ATh4F.2

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper ATh4F.2
•https://doi.org/10.1364/ACPC.2012.ATh4F.2

Production Technology of High Performance III-Nitride Devices

S. D. Roh

Asia Communications and Photonics Conference 2012

Guangzhou China
7–10 November 2012
ISBN: 978-1-55752-957-2

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Development and Production of High Performance LEDs (ATh4F)

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S. D. Roh, "Production Technology of High Performance III-Nitride Devices," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper ATh4F.2.

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Abstract

Large scale production of III-Nitride LEDs requires close attention to scalability and cost effectiveness of every technology adopted for production. Substrate diameter, material, and potential applicability to other III-N devices are important factors to consider.

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