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Numerical Simulation of the Uni-traveling Carrier Photodiode with GaAsSb/InP Heterojunction

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Abstract

A kind of GaAsSb/InP uni-traveling carrier photodiode has been simulated by using a 2D drift-diffusion approach. The simulated bandwidth based on the modified structure could reach 106.6GHz at reverse bias of 2V.

© 2013 Optical Society of America

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