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Conferences > ACPC > 2013 > AF2B > AF2B.17

The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate

Xiaoyi Li, Qi Wang, Yifan Wang, Zhigang Jia, Xiaomin Ren, Jun Wang, Shiwei Cai, Xia Zhang, Yongqing Huang, and Xiaofeng Duan

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Abstract

High-quality GaAs epilayers on Si substrates have been obtained by insertion of InGaAs/GaAs superlattices combined with thermal cycle annealing. The crystallinity of GaAs epilayer has been investigated by DCXRD, AFM and TEM.

© 2013 Optical Society of America

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