Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ACPC > 2013 > AF3A > AF3A.5

Behaviours of Background Carrier Concentration in MOCVD-Grown GaAs on Si*

Jun Wang, Chan Deng, Gang Jiazhi, Yifan Wang, Qi Wang, Yongqing Huang, and Xiaomin Ren

Not Accessible

Your library or personal account may give you access

Abstract

We report the behavious of the background carrier in the MOCVD-grown GaAs/Si films. The results demonstrate the thermal annealing and mass flow rates of arsine have great effects on the background carrier concentration in epilayers.

© 2013 Optical Society of America

PDF Article
More Like This
The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate

Xiaoyi Li, Qi Wang, Yifan Wang, Zhigang Jia, Xiaomin Ren, Jun Wang, Shiwei Cai, Xia Zhang, Yongqing Huang, and Xiaofeng Duan
AF2B.17 Asia Communications and Photonics Conference (ACP) 2013

GaAs Nanoneedle Photodetector Monolithically Grown on a (111) Si Substrate by MOCVD

Linus C Chuang, Chris Chase, Michael Moewe, Kar Wei Ng, Shanna Crankshaw, and Connie Chang-Hasnain
CTuV4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Effect of Growth Temperature of GaAs/Al0.4Ga0.6As Lower Cladding Layer on the Photoluminescence Intensity of InAs/Sb:GaAs Quantum Dots Monolithically Grown on Ge/Si Substrate by MOCVD for Laser Application

Mohan Rajesh, Makoto Miura, Masao Nishioka, and Yasuhiko Arakawa
20p_C1_3 JSAP-OSA Joint Symposia (JSAP) 2014

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use