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Conferences > ACPC > 2013 > AF3B > AF3B.3

GeSn near infrared photodetectors

Buwen Cheng, Dongliang Zhang, Shaojian Su, Xu Zhang, Chunlai Xue, Chuanbo Li, Guangze Zhang, and Qiming Wang

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Abstract

GeSn p-i-n photodetectors grown on Si and Ge substrates by molecular beam epitaxy were fabricated. The photodetector on Ge has a low dark current density of 6.1mA/cm2 and extends the operating wavelength to about 2μm.

© 2013 Optical Society of America

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