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Conferences > ACPC > 2013 > AF4A > AF4A.2

Effect of different buffer layers and superlattice intermediate layers on GaAs/Si(001)

Yifan Wang, Qi Wang, Zhigang Jia, Xiaoyi Li, Can Deng, Yingce Yan, Xiaomin Ren, Jun Wang, Shiwei Cai, and Yongqing Huang

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Abstract

The epitaxy of GaAs/Si(001) has been carried out via inserting different buffer layers and different SLSs by MOCVD. High quality epilayers were obtained by AlAs buffer layer and GaAs0.85P0.15/GaAs SLS.

© 2013 Optical Society of America

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