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Ion implantation Technology Applied to GaN-based Light Emitting Diodes

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Abstract

The shallow depth and selective area ion implantation has been performed on the GaN/sapphire template and sapphire substrate. The after grown GaN layer on the implanted GaN/sapphire template and sapphire substrate shows the selected growth characteristics. The selective growth character could be used to create the shapes of the GaN layer for the applications of the opto-electrical devices.

© 2013 Optical Society of America

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