Characteristics of Nitride Devices Prepared by Pulsed Sputtering

Hiroshi Fujioka; Hiroshi Fujioka

doi:10.1364/ACPC.2014.AF1J.1

Asia Communications and Photonics Conference 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper AF1J.1
•https://doi.org/10.1364/ACPC.2014.AF1J.1

Characteristics of Nitride Devices Prepared by Pulsed Sputtering

Hiroshi Fujioka

Asia Communications and Photonics Conference 2014

Shanghai China
11–14 November 2014
ISBN: 978-1-55752-852-0

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H. Fujioka, "Characteristics of Nitride Devices Prepared by Pulsed Sputtering," in Asia Communications and Photonics Conference 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper AF1J.1.

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Abstract

We will compare basic characteristics of nitride devices prepared by pulsed sputtering deposition (PSD) with those by MOCVD and we will show that low growth temperature of PSD is quite advantageous for fabrication of various devices.

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