Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD

Kei May Lau

doi:10.1364/ACPC.2014.ATh2H.2

Asia Communications and Photonics Conference 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper ATh2H.2
•https://doi.org/10.1364/ACPC.2014.ATh2H.2

Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD

Kei May Lau

Asia Communications and Photonics Conference 2014

Shanghai China
11–14 November 2014
ISBN: 978-1-55752-852-0

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Novel LED (ATh2H)

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K. M. Lau, "Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD," in Asia Communications and Photonics Conference 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper ATh2H.2.

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Abstract

III-nitride based LED and HEMT monolithically integrated on a sapphire substrate have been demonstrated by MOCVD selective growth technique. The integrated HEMT-LED device with good device characteristics emit modulated blue light by the gate voltage.

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