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Conferences > ACPC > 2014 > ATh3A > ATh3A.1

Non Polar GaN and (Ga,In)N/GaN Heterostructures Grown On A-Plane (1 1 -2 0) ZnO Subtrates

A. Ogereau, J. Brault, Y. Xia, B. Damilano, M. Leroux, M. Nemoz, P. Vennéguès, M. Teisseire, and J. M. Chauveau

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Abstract

Non polar GaN is grown on (11-20) ZnO substrates by molecular beam epitaxy. The GaN quality is strongly improved by using a nitrogen plasma source for the buffer layer. Room temperature blue emitting (In,Ga)N/GaN quantum wells are demonstrated.

© 2014 Optical Society of America

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