Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Broadband gain incorporating N compositional fluctuations for a GaInNAs semiconductor optical amplifier

Not Accessible

Your library or personal account may give you access

Abstract

A theoretical analysis of the broadband gain of GaInNAs SOA has been developed considering N compositional fluctuations leading to QD-like behavior. The resulting material gain is broadened by adding the gain of the QD fluctuations.

© 2014 Optical Society of America

PDF Article
More Like This
Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Xiao Sun and Judy M. Rorison
79870E Asia Communications and Photonics Conference and Exhibition (ACP) 2010

Modelling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N compositional Fluctuations

X. Sun, N. Vogiatzis, and J. M. Rorison
CB_P_15 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2013

1.3 µm GaInNAs Semiconductor Optical Amplifier

Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yasuhiro Iguchi, Takashi Yamada, Shigenori Takagishi, Masashi Ito, and Akira Ishida
OMB4 Optical Amplifiers and Their Applications (OAA) 2004

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved