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Research of high performance Ge/Si avalanche photodiodes for single-photon detection

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Abstract

A separate-absorption-charge-multiplication Ge/Si avalanche photodiode was designed. The devices have high dark current at low reverse bias, because of surface impurity and rough sidewall. A guard-ring structure and in-situ doping was introduced to decrease leakage-current.

© 2014 Optical Society of America

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