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Conferences > ACPC > 2014 > ATh4I > ATh4I.2

Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes

Jong-In Shim, Hyunsung Kim, and Dong-Soo Shin

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Abstract

Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current.

© 2014 Optical Society of America

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