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Optical Gain and Absorption of 420 nm InGaN-based Laser Diodes Grown on m-Plane GaN Substrate

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Abstract

Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm−1.

© 2014 Optical Society of America

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