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Electrically Injected InGaN/GaN Disk-in-Nanowire Lasers Monolithically Grown on (001) Silicon

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Abstract

The growth and characteristics of a monolithically grown, electrically injected InGaN/GaN disk in nanowire edge emitting green laser (λ = 533 nm) operating at room temperature are demonstrated.

© 2014 Optical Society of America

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